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Wednesday, November 18, 2020 | History

3 edition of Principles of dielectrics found in the catalog.

Principles of dielectrics

B. K. P. Scaife

Principles of dielectrics

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  • 3 Currently reading

Published by Clarendon in Oxford .
Written in English

    Subjects:
  • Dielectrics.

  • Edition Notes

    Includes bibliographical references and index.

    StatementB.K.P. Scaife.
    SeriesMonographs on the physics and chemistry of materials -- 45
    Classifications
    LC ClassificationsQC585
    The Physical Object
    Pagination(370)p.
    Number of Pages370
    ID Numbers
    Open LibraryOL22641787M
    ISBN 100198513801


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Principles of dielectrics by B. K. P. Scaife Download PDF EPUB FB2

Which is what the authors provide. They start with the basic properties of dielectrics and develop the often neglected theory. It is nice to see this comprehensive treatment.

The emphasis here is on a macroscopic scale. The typical audience for this book has no need for a microscopic quantum mechanical by: Principles of dielectrics.

Oxford: Clarendon Press ; New York: Oxford University Press, (OCoLC) Material Type: Internet resource: Document Type: Book, Internet Resource: All Authors / Contributors: B K P Scaife. This work gives an up-to-date account of the theory of dielectrics suitable for graduates and final-year undergraduates in physics, chemistry, electrical engineering and materials science.

There is a concentration on the basic principles of the subject, without a detailed discussion of experimental data. The macroscopic behaviour of dielectric materials receives most attention. This book concentrates on the basic principles of the subject. The macroscopic behaviour of dielectrics receives most attention while an introduction to the microscopic theory is given.

@article{osti_, title = {Principles of dielectrics}, author = {Scaife, B.K.P.}, abstractNote = {This paper focuses on basic principles of the theory Principles of dielectrics book dielectrics. Concentrates on fundamentals including relevant areas of electrostatics.

Author takes a completely classical approach, avoiding quantum mechanics altogether. The book explains statistical theories of dipole orientation in an applied field and theories relating molecular and macroscopic quantities.

The propagation of an electromagnetic wave, dipole relaxation of defects in crystal lattices, and space-charge polarization and relaxation are also discussed. Principles of Dielectrics This ebook list.

Principles of Dielectrics by B. Scaife,available at Book Depository with free delivery worldwide.5/5(1). Gate Dielectrics and MOS ULSIs provides necessary and sufficient information for those who wish to know well and go beyond the conventional SiO2 gate dielectric.

The topics particularly focus on dielectric films satisfying the superior quality needed for Cited by: This title provides an up-to-date account of the basic principles of dielectrics.

It is ideal for advanced undergraduates and graduates in the field, and includes the authoritative coverage needed to develop an understanding of the macroscopic behavior of dielectric materials.

Readers will find full derivations of many important formulas as well as a useful listing of references and. 3 Dielectrics in time-dependent fields 46 Step-function response and the principle of superposition 46 The dispersion relations 51 Dielectrics with two polarization mechanisms 56 Examples of the dispersion relations 57 Examples of.

: Principles of Dielectrics (Monographs on the Physics and Chemistry of Materials) (Monographs on the Physics and Chemistry of Materials (45)) () by Scaife, B. and a great selection of similar New, Used and Collectible Books available now at great Range: $ - $ Description: Dielectrics in Electric Fields explores the influence of electric fields on dielectric—i.e., non-conducting or insulating—materials, examining the distinctive behaviors of these materials through well-established principles of physics and engineering.

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Dielectrics are materials in which the electrical field can exist for a long time and. Gate Dielectrics and MOS ULSIs Principles, Technologies and Applications. Authors: Hori, Takashi Free Preview.

The reader will obtain updated information for not only deep-submicron ULSIs having nanometer-range ultrathin gate- dielectrics but also nitrided oxides from this first book presenting them in detail so as to reach the present high Brand: Springer-Verlag Berlin Heidelberg.

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Since the original publication of this book, a number of errors have been brought to our attention. Corrections of these errors are incorporated in this edition. In the engineering application of low-frequency currents, an 5/5(1).

This book presents materials fundamentals of novel gate dielectrics that are being introduced into semiconductor manufacturing to ensure the continuous scalling of the CMOS devices. This is a very fast evolving field of research so we choose to focus on the basic understanding of the structure, thermodunamics, and electronic properties of these.

Those electrical properties of the molecule must be selected that are capable of a theoretical interpretation. The classical theory of the polarization of dielectrics shows that such properties of a molecule are exhibited in the behavior of the substance in an electric : Vladimir I.

Minkin, Osip A. Osipov, Yurii A. Zhdanov, Worth E. Vaughan. Combining both fundamental principles and real-life applications in a single volume, this book discusses the latest research results in ferroelectrics, including many new ferroelectric materials for the latest technologies, such as capacitors, transducers and memories.

transducers and memories. The first two chapters introduce dielectrics. where a is the vector connecting points r − and r +.Note that in this case (and indeed for all systems with Q = 0), the dipole moment does not depend on the choice of the reference frame's origin.

A less trivial example of a dipole is a conducting sphere of radius R in a uniform external electric field E a reminder, this problem was solved in sectionand its result is. Download Citation | Device Principles of High-K Dielectrics | The growth of the semiconductor industr yi nt he last few decades has largely been driven by the growth of integrated circuits (IC.

Chapter 2 THEORY OF DIELECTRICS Theory of Homogeneous Dielectrics Theory of Heterogeneous Dielectrics Dielectric Loss and Dissipation Factor Attenuation Factor and Penetration Depth Frequency Dependence of Tissue Conductivity and Relative Permittivity Importance of Dielectric Properties of Tissue Summary.

Dielectrics in Electric Fields explores the influence of electric fields on dielectric—i.e., non-conducting or insulating—materials, examining the distinctive behaviors of these materials through well-established principles of physics and engineering.

Featuring five new chapters, nearly new figures, and more than new citations, this fully updated and significantly. Physics of Dielectrics for the Engineer is a systematic attempt to clarify and correlate advanced concepts underlying the physics of dielectrics.

It reviews the basics of electrostatics, the different models for the polarizability of atoms and molecules, and the macroscopic Edition: 1.

The electric susceptibility χ e of a dielectric materials is a measure of how easily it polarizes in response to an electric field. This, in turn, determines the electric permittivity of the material and thus influences many other phenomena in that medium, from the capacitance of capacitors to the speed of light.

It is defined as the constant of proportionality (which may be a tensor. The chapter first gives a brief introduction on conduction, polarization, dissipation, and breakdown of dielectrics under electric field.

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The first two chapters introduce dielectrics and microscopic materials properties, while the following chapter. Dialectrics and Waves was first published in as a pioneering attempt to bring physicists, chemists, and electrical engineers together in a common understanding of modern materials research.

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The term high-κ dielectric refers to a material with a high dielectric constant (κ, kappa), as compared to silicon -κ dielectrics are used in semiconductor manufacturing processes where they are usually used to replace a silicon dioxide gate dielectric or another dielectric layer of a device.

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